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dc.contributor.authorHsieh, CRen_US
dc.contributor.authorLin, SHen_US
dc.contributor.authorHsu, KYen_US
dc.contributor.authorHsieh, TCen_US
dc.contributor.authorChiou, Aen_US
dc.contributor.authorHong, Jen_US
dc.date.accessioned2014-12-08T15:46:09Z-
dc.date.available2014-12-08T15:46:09Z-
dc.date.issued1999-10-10en_US
dc.identifier.issn0003-6935en_US
dc.identifier.urihttp://hdl.handle.net/11536/31034-
dc.description.abstractWe analyze and compare two typical recording and thermal fixing procedures of a volume hologram in a Fe:LiNbO3 crystal (low-high-low procedure and high-low procedure). We consider the kinetics of the recording, compensating, and developing processes by taking into account the ratio of the conductivities between the protons and the electrons as a function of temperature. From the analysis the optimal environmental conditions tin terms of the fixing temperature and the compensation time) for each fixing procedure can be deduced for a crystal with given material parameters. (C) 1999 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleOptimal conditions for thermal fixing of volume holograms in Fe : LiNbO3 crystalsen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume38en_US
dc.citation.issue29en_US
dc.citation.spage6141en_US
dc.citation.epage6151en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000083381500006-
dc.citation.woscount7-
Appears in Collections:Articles


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