Optimal conditions for thermal fixing of volume holograms in Fe : LiNbO3 crystals

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DC 欄位	值	語言
dc.contributor.author	Hsieh, CR	en_US
dc.contributor.author	Lin, SH	en_US
dc.contributor.author	Hsu, KY	en_US
dc.contributor.author	Hsieh, TC	en_US
dc.contributor.author	Chiou, A	en_US
dc.contributor.author	Hong, J	en_US
dc.date.accessioned	2014-12-08T15:46:09Z	-
dc.date.available	2014-12-08T15:46:09Z	-
dc.date.issued	1999-10-10	en_US
dc.identifier.issn	0003-6935	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31034	-
dc.description.abstract	We analyze and compare two typical recording and thermal fixing procedures of a volume hologram in a Fe:LiNbO3 crystal (low-high-low procedure and high-low procedure). We consider the kinetics of the recording, compensating, and developing processes by taking into account the ratio of the conductivities between the protons and the electrons as a function of temperature. From the analysis the optimal environmental conditions tin terms of the fixing temperature and the compensation time) for each fixing procedure can be deduced for a crystal with given material parameters. (C) 1999 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	Optimal conditions for thermal fixing of volume holograms in Fe : LiNbO3 crystals	en_US
dc.type	Article	en_US
dc.identifier.journal	APPLIED OPTICS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	29	en_US
dc.citation.spage	6141	en_US
dc.citation.epage	6151	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000083381500006	-
dc.citation.woscount	7	-
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