標題: | ELECTRICAL BEHAVIOR OF THE MNO2-DOPED ZNO-BI2O3 SYSTEM |
作者: | CHIOU, BS CHUNG, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-三月-1993 |
摘要: | The electrical behaviour of xwt% MnO2-(100-x)(95 wt% ZnO-5 wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant. |
URI: | http://hdl.handle.net/11536/3106 |
ISSN: | 0957-4522 |
期刊: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
Volume: | 4 |
Issue: | 1 |
起始頁: | 38 |
結束頁: | 42 |
顯示於類別: | 期刊論文 |