標題: ELECTRICAL BEHAVIOR OF THE MNO2-DOPED ZNO-BI2O3 SYSTEM
作者: CHIOU, BS
CHUNG, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1993
摘要: The electrical behaviour of xwt% MnO2-(100-x)(95 wt% ZnO-5 wt% Bi2O3) is investigated. Addition of MnO2 retards grain growth in the ZnO-Bi2O3 system. It is observed that the MnO2 dopant decreases the leakage current, while it increases the non-linearity coefficient and the grain boundary resistance of ZnO-Bi2O3 ceramics. In addition, the noise spectrum of MnO2-doped ZnO-Bi2O3 deviates from 1/f behaviour. The deviation is, however, less enhanced for samples with more MnO2 dopant.
URI: http://hdl.handle.net/11536/3106
ISSN: 0957-4522
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 4
Issue: 1
起始頁: 38
結束頁: 42
顯示於類別:期刊論文