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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorChung, H. L.en_US
dc.contributor.authorKu, J. T.en_US
dc.contributor.authorChen, C. Y.en_US
dc.contributor.authorChien, K. F.en_US
dc.contributor.authorFan, W. C.en_US
dc.contributor.authorLee, L.en_US
dc.contributor.authorChyi, J. I.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChen, W. K.en_US
dc.date.accessioned2014-12-08T15:46:11Z-
dc.date.available2014-12-08T15:46:11Z-
dc.date.issued2011-05-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2010.10.106en_US
dc.identifier.urihttp://hdl.handle.net/11536/31064-
dc.description.abstractWe have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe(1-x)O(x) (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe(1-x)O(x) decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleOptical characterization of isoelectronic ZnSe(1-x)O(x) semiconductorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2010.10.106en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume323en_US
dc.citation.issue1en_US
dc.citation.spage122en_US
dc.citation.epage126en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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