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dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, TMen_US
dc.contributor.authorLiao, CCen_US
dc.contributor.authorLan, YPen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:46:11Z-
dc.date.available2014-12-08T15:46:11Z-
dc.date.issued1999-10-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/68.789704en_US
dc.identifier.urihttp://hdl.handle.net/11536/31067-
dc.description.abstractWe demonstrate a compact and efficient diode-end-pumped TEM00 laser with output power of 25.2 W for 52 W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 21-W of average power at a pulse repetition rate of 100 kHz and similar to 1.1-mJ pulse energy at a pulse repetition rate of 10 kHz were produced, At 10 kHz, the pulse width is around 10 ns and the peak power is higher than 100 kW.en_US
dc.language.isoen_USen_US
dc.subjectdiode-pumpeden_US
dc.subjectNd-doped laseren_US
dc.subjectQ-switcheden_US
dc.titleEfficient high-power diode-end-pumped TEM00 Nd : YVO4 laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/68.789704en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue10en_US
dc.citation.spage1241en_US
dc.citation.epage1243en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000082645800013-
dc.citation.woscount51-
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