標題: Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
作者: Tsai, MS
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 7-九月-1999
摘要: The ionic and electronic conductivity characteristics and defects in the Ba0.47Sr0.53TiO3 (BST) thin films that were rf-sputtered at 450 degrees C on a Pt bottom electrode at various O-2/(Ar + O-2) mixing ratios (OMR) were studied. The dielectric properties specific to the BST films can be explained by considering the influence of the dielectric relaxation phenomenon. Through the measurement of the dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the dielectric relaxation and obtained the defect quantity of the films, on the basis of the capacitance, admittance and impedance spectra. The defect density of BST films decreases with an increase of OMR. The majority of electrical conductivity is carried by electrons (electronic conductivity) and not the ionic defects (ionic conductivity).
URI: http://dx.doi.org/10.1088/0022-3727/32/17/301
http://hdl.handle.net/11536/31090
ISSN: 0022-3727
DOI: 10.1088/0022-3727/32/17/301
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 32
Issue: 17
起始頁: 2141
結束頁: 2145
顯示於類別:期刊論文


文件中的檔案:

  1. 000082506300004.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。