Characteristics of novel polysilicon oxide by anodic oxidation

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DC 欄位	值	語言
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Liu, JS	en_US
dc.contributor.author	Chiang, MC	en_US
dc.date.accessioned	2014-12-08T15:46:14Z	-
dc.date.available	2014-12-08T15:46:14Z	-
dc.date.issued	1999-09-01	en_US
dc.identifier.issn	0167-9317	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0167-9317(99)00378-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31100	-
dc.description.abstract	For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional thermal polyoxide. The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabilities.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of novel polysilicon oxide by anodic oxidation	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0167-9317(99)00378-0	en_US
dc.identifier.journal	MICROELECTRONIC ENGINEERING	en_US
dc.citation.volume	48	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	235	en_US
dc.citation.epage	238	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000083250300053	-
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