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dc.contributor.authorFan, W. C.en_US
dc.contributor.authorKu, J. T.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChen, W. K.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorChia, C. H.en_US
dc.date.accessioned2014-12-08T15:46:20Z-
dc.date.available2014-12-08T15:46:20Z-
dc.date.issued2011-05-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2010.11.069en_US
dc.identifier.urihttp://hdl.handle.net/11536/31175-
dc.description.abstractThe sigma(+) and sigma(-) circularly polarized time-integrated and time-resolved Photoluminescence (PL) measurements were employed to investigate the carrier spin dynamics of ZnMnTe/ZnSe Quantum Dots (QDs) grown on GaAs substrates by molecular beam epitaxy. The Kohlrausch's stretching exponential function well correlates both the sigma(+) and sigma(-) decay profiles. The measured spin relaxation time is about 23 ns. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanostructuresen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectNanomaterialsen_US
dc.subjectZinc compoundsen_US
dc.subjectMagneto-optic materialsen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleMagneto-optical properties of ZnMnTe/ZnSe quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2010.11.069en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume323en_US
dc.citation.issue1en_US
dc.citation.spage380en_US
dc.citation.epage382en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000292175000096-
Appears in Collections:Conferences Paper


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