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dc.contributor.authorChen, YAen_US
dc.contributor.authorHsu, MLen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorHong, JWen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:46:22Z-
dc.date.available2014-12-08T15:46:22Z-
dc.date.issued1999-07-22en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:19990786en_US
dc.identifier.urihttp://hdl.handle.net/11536/31199-
dc.description.abstractA conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-mm light-emitting diode (TFLED) at a low temperature (similar to 180 degrees C). The obtained TFLED had a brightness (B) of 1060cd/m(2) at an injection current density (J) of 600mA/cm(2) and a threshold voltage (V-th) of 12.6V, which were much better than those of 330cd/m(2) and 18.5V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel meshen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:19990786en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue15en_US
dc.citation.spage1274en_US
dc.citation.epage1275en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000081960100045-
dc.citation.woscount4-
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