Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh

doi:10.1049/el:19990786

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, YA	en_US
dc.contributor.author	Hsu, ML	en_US
dc.contributor.author	Laih, LH	en_US
dc.contributor.author	Hong, JW	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:46:22Z	-
dc.date.available	2014-12-08T15:46:22Z	-
dc.date.issued	1999-07-22	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19990786	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31199	-
dc.description.abstract	A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-mm light-emitting diode (TFLED) at a low temperature (similar to 180 degrees C). The obtained TFLED had a brightness (B) of 1060cd/m(2) at an injection current density (J) of 600mA/cm(2) and a threshold voltage (V-th) of 12.6V, which were much better than those of 330cd/m(2) and 18.5V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19990786	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	15	en_US
dc.citation.spage	1274	en_US
dc.citation.epage	1275	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000081960100045	-
dc.citation.woscount	4	-
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