完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChung, SSen_US
dc.contributor.authorYang, JJen_US
dc.date.accessioned2014-12-08T15:46:24Z-
dc.date.available2014-12-08T15:46:24Z-
dc.date.issued1999-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/11536/31222-
dc.description.abstractIn this paper, we have demonstrated successfully a new approach for evaluating the hot-carrier reliability in submicron LDD MOSFET with various drain engineering. It was developed based on an efficient charge pumping measurement technique along with a new criterion. This new criterion is based on an understanding of the interface state (N-it) distribution, instead of substrate current or impact ionization rate, for evaluating the hot-carrier reliability of drain-engineered devices. The position of the peak N-it distribution as well as the electric field distribution is critical to the device hot-carrier reliability. From the characterized N-it spatial distribution, we found that the shape of the interface state distribution is similar to that of the electric field. Also, to suppress the spacer-induced degradation, we should keep the peak values of interface state away from the spacer region. In our studied example, for conventional LDD device, sidewall spacer is the dominant damaged region since the interface state in this region causes an additional series resistance which leads to drain current degradation. LATID device can effectively reduce hot-carrier effect since most of the interface states are generated away from the gate edge toward the channel region such that the spacer-induced resistance effect is weaker than that of LDD devices.en_US
dc.language.isoen_USen_US
dc.titleA new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET'sen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume46en_US
dc.citation.issue7en_US
dc.citation.spage1371en_US
dc.citation.epage1377en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000081090900011-
dc.citation.woscount13-
顯示於類別:期刊論文


文件中的檔案:

  1. 000081090900011.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。