Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

doi:10.1109/55.772363

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, YH	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	Chang, SL	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Gwo, S	en_US
dc.contributor.author	Tsai, C	en_US
dc.date.accessioned	2014-12-08T15:46:25Z	-
dc.date.available	2014-12-08T15:46:25Z	-
dc.date.issued	1999-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.772363	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31240	-
dc.description.abstract	We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed hy scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.	en_US
dc.language.iso	en_US	en_US
dc.subject	epitaxial CoSi2	en_US
dc.subject	HF pretreatment	en_US
dc.title	Improved electrical characteristics of CoSi2 using HF-vapor pretreatment	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.772363	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	7	en_US
dc.citation.spage	320	en_US
dc.citation.epage	322	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000081151400003	-
dc.citation.woscount	2	-
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