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dc.contributor.authorChen, YCen_US
dc.contributor.authorYang, MZen_US
dc.contributor.authorTung, ICen_US
dc.contributor.authorChen, MPen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:46:27Z-
dc.date.available2014-12-08T15:46:27Z-
dc.date.issued1999-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.38.4226en_US
dc.identifier.urihttp://hdl.handle.net/11536/31266-
dc.description.abstractThe high quality silicon oxide films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetraethylorthosilicate (TEOS)-oxygen based chemistry. The O-2- or N2O-plasma treatments were performed on the as-deposited films as an attempt to improve the properties of the TEOS oxide films. TEOS oxide film deposited at lower pressure had lower Si-OH content, less carbon impurity, and flatter surface, and hence had better electrical properties. Both O-2- and N2O-plasma would decrease the oxygen content of the oxide film, which led the composition of the film to deviate from the stoichiometric SiO2. The O-2-plasma treatment did not show the encouraging effect on the chemical structure and electrical properties of the TEOS oxide films. In contrast, the N2O-plasma treatment could be a promising means to improve the breakdown field and leakage current density of the TEOS oxide films, which was accomplished by the N2O-plasma effect to facilitate the passivation of dangling bonds, linking reaction of Si-OH bonds, nitridation reaction and densification of the amorphous silicon oxide network.en_US
dc.language.isoen_USen_US
dc.subjectsilicon dioxideen_US
dc.subjecttetraethylorthosilicateen_US
dc.subjectTEOSen_US
dc.subjectplasma-enhanced chemical-vapor-depositionen_US
dc.subjectPECVDen_US
dc.subjectplasma treatmenten_US
dc.titleEffects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.38.4226en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume38en_US
dc.citation.issue7Aen_US
dc.citation.spage4226en_US
dc.citation.epage4232en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000083278000052-
dc.citation.woscount11-
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