完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Luo, JS | en_US |
dc.contributor.author | Lin, WT | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.contributor.author | Shih, PS | en_US |
dc.date.accessioned | 2014-12-08T15:46:32Z | - |
dc.date.available | 2014-12-08T15:46:32Z | - |
dc.date.issued | 1999-06-01 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0040-6090(98)01774-X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31299 | - |
dc.description.abstract | The Cu3Si-catalyzed oxidation behavior of Cu/Si0.76Ge0.24 after annealing at a temperature of 200-300 degrees C was studied using transmission electron microscopy (TEM). For the Cu/Si0.76Ge0.24 samples annealed at 200 degrees C and followed by exposure in air for 1-4 weeks an SiO2 layer embedded with precipitates containing Cu, Ge, Si, and O was formed on the surface of the Cu-3(Si1-xGex) film. During exposure the Cu atoms released from Cu-3(Si1-xGex) by oxidation diffused down to the residual Si0.76Ge0.24 film and subsequently the Si substrate to form. new Cu-3(Si1-xGex) and Cu3Si, respectively. After exposure for 5-6 weeks not only the oxidation of the surface layer became severe but also the growth of the buried SiO2 layer was initiated at the Cu-3(Si1-xGex)/Cu3Si interface. Concurrently, the Cu3Si-catalyzed oxidation of Si by inward movement of the SiO2/Si interface was also observed. As compared with the annealed Cu/Si samples the presence of Ge significantly lowered the oxidation rate of the annealed Cu/Si0.76Ge0.24 samples. Higher temperature annealing promoted the oxidation rate because of Ge segregation out of the Cu-3(Si1-xGex) layer and the formation of a larger fraction of the Cu-3(Si1-xGex)/Cu3Si interface where the buried SiO2 layer was initially formed. (C) 1999 Elsevier Science S.A. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Cu-3(Si1-xGex) | en_US |
dc.subject | room temperature oxidation | en_US |
dc.subject | Ge segregation | en_US |
dc.subject | transmission electron microscopy | en_US |
dc.title | Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/S0040-6090(98)01774-X | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 346 | en_US |
dc.citation.issue | 1-2 | en_US |
dc.citation.spage | 207 | en_US |
dc.citation.epage | 211 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000081019400026 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |