Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge

doi:10.1109/55.761021

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Chen, TJ	en_US
dc.contributor.author	Liu, C	en_US
dc.contributor.author	Gudmundsson, JT	en_US
dc.contributor.author	Lieberman, MA	en_US
dc.date.accessioned	2014-12-08T15:46:38Z	-
dc.date.available	2014-12-08T15:46:38Z	-
dc.date.issued	1999-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.761021	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31366	-
dc.description.abstract	A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.	en_US
dc.language.iso	en_US	en_US
dc.subject	hydrogenation	en_US
dc.subject	inductively coupled plasma	en_US
dc.subject	thin-film transistor	en_US
dc.title	Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.761021	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	5	en_US
dc.citation.spage	223	en_US
dc.citation.epage	225	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000080066700010	-
dc.citation.woscount	21	-
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