Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

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DC 欄位	值	語言
dc.contributor.author	Lin, Y. F.	en_US
dc.contributor.author	Jian, W. B.	en_US
dc.contributor.author	Wu, Z. Y.	en_US
dc.contributor.author	Chen, F. R.	en_US
dc.contributor.author	Kai, J. J.	en_US
dc.contributor.author	Lin, J. J.	en_US
dc.date.accessioned	2014-12-08T15:46:44Z	-
dc.date.available	2014-12-08T15:46:44Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-1572-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31431	-
dc.identifier.uri	http://dx.doi.org/10.1109/INEC.2008.4585677	en_US
dc.description.abstract	Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperatare resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.	en_US
dc.language.iso	en_US	en_US
dc.title	Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/INEC.2008.4585677	en_US
dc.identifier.journal	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3	en_US
dc.citation.spage	1112	en_US
dc.citation.epage	1115	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000259893500254	-
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