完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Tseng, Chi-Che | en_US |
| dc.contributor.author | Kung, Shu-Yen | en_US |
| dc.contributor.author | Chao, Kuang-Ping | en_US |
| dc.contributor.author | Mai, Shu-Cheng | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.date.accessioned | 2014-12-08T15:46:53Z | - |
| dc.date.available | 2014-12-08T15:46:53Z | - |
| dc.date.issued | 2011-05-01 | en_US |
| dc.identifier.issn | 1350-4495 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.infrared.2010.12.017 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/31508 | - |
| dc.description.abstract | A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections. (C) 2010 Elsevier B.V. All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Quantum-dot infrared photodetectors | en_US |
| dc.subject | Quantum dots | en_US |
| dc.subject | Multi-color detection | en_US |
| dc.title | Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection | en_US |
| dc.type | Article; Proceedings Paper | en_US |
| dc.identifier.doi | 10.1016/j.infrared.2010.12.017 | en_US |
| dc.identifier.journal | INFRARED PHYSICS & TECHNOLOGY | en_US |
| dc.citation.volume | 54 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 220 | en_US |
| dc.citation.epage | 223 | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.identifier.wosnumber | WOS:000290973200014 | - |
| 顯示於類別： | 會議論文 | |
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- Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors / Lin, Wei-Hsun;Tseng, Chi-Che;Chao, Kuang-Ping;Mai, Shu-Cheng;Lin, Shih-Yen
- Broadband Quantum-Dot Infrared Photodetector / Lin, Wei-Hsun;Tseng, Chi-Che;Chao, Kuang-Ping;Kung, Shu-Yen;Lin, Shih-Yen
- Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions / Lin, Wei-Hsun;Lin, Shih-Yen
- InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range / Lin, Wei-Hsun;Tseng, Chi-Che;Chao, Kuang-Ping;Mai, Shu-Cheng;Lin, Shih-Yen
- Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots / Tseng, Chi-Che;Chou, Shu-Ting;Chen, Yi-Hao;Chen, Cheng-Nan;Lin, Wei-Hsun
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