Full metadata record
DC FieldValueLanguage
dc.contributor.authorKoo, HSen_US
dc.contributor.authorLo, JRen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorLin, CSen_US
dc.date.accessioned2014-12-08T15:46:55Z-
dc.date.available2014-12-08T15:46:55Z-
dc.date.issued1999-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.38.689en_US
dc.identifier.urihttp://hdl.handle.net/11536/31536-
dc.description.abstractThe effects of Ca, Cu, and Ca-Cu richness on the formation behavior and physical characteristics of high-T-c Tl-based superconductors were investigated systematically. In addition to sintering temperature and time, intermediate phases which proved important to the formation and properties of nearly single-phase, triple-CuO-layers Tl2Ba2Ca2Cu3Oy superconductors and optimal processing conditions were also investigated. Ca and Ca-Cu richness introduced positive effects on the properties of nearly single-phase Tl2Ba2Ca2Cu3Oy superconductors and helps in the formation of the appropriate intermediate phases, whereas Cu richness produced a negative effect. The higher sintering temperatures of the specimens accounted for the tailing of electrical resistance before the critical zero resistance temperature was approached, and for the instability of the superconducting phase. Lower post-annealing temperatures of the bulk samples slightly improved the superconducting properties. The resultant bulk Tl-based superconductors can be used as a Tl vapor source for the formation of superconducting thin films within a closed system.en_US
dc.language.isoen_USen_US
dc.subjectTlBaCaCuOen_US
dc.subjecthigh-T-c superconducting oxidesen_US
dc.subjectintermediateen_US
dc.subjectformation behaviouren_US
dc.subjectreaction routeen_US
dc.subjectCaen_US
dc.subjectCuen_US
dc.subjectCa-Cu-richnessen_US
dc.titleFormation behavior of high-T-c Tl-based superconductorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.38.689en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume38en_US
dc.citation.issue2Aen_US
dc.citation.spage689en_US
dc.citation.epage697en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000079477800018-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000079477800018.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.