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dc.contributor.authorChen, FRen_US
dc.contributor.authorKai, JJen_US
dc.contributor.authorChang, Len_US
dc.contributor.authorWang, JYen_US
dc.contributor.authorChen, WJen_US
dc.date.accessioned2014-12-08T15:47:05Z-
dc.date.available2014-12-08T15:47:05Z-
dc.date.issued1999en_US
dc.identifier.issn0022-0744en_US
dc.identifier.urihttp://hdl.handle.net/11536/31596-
dc.description.abstractA linear imaging constrained-maximum entropy method has been developed to extend the resolution from a series of defocused high-resolution images and one diffraction pattern. Our method is basically the Gerchberg-Saxton algorithm, which restores spatial information by imposing real space and Fourier space constraints cyclically. A constrained-maximum entropy method (constrained-MEM) was developed for real space constraints. This constrained-MEM finds an optimum solution of phases such that simulated images resemble the experimental image under some constraints in real space. These constraints include conservation of charge as well as a minimum of the chi(2) function, which is a measure of the level of satisfaction between simulated images and experimental images. For the Fourier space constraint, the square root intensities of diffraction spots were substituted. In this paper, we demonstrate that this method is able to extend the resolution from a series of high-resolution images and one diffraction pattern from a periodic NiSi2/Si interface. The atomic structure of the NiSi2/Si interface can be directly read out from the MEM image without a priori knowledge of the interface.en_US
dc.language.isoen_USen_US
dc.subjectmaximum entropyen_US
dc.subjectlinear image restorationen_US
dc.subjectinterfacial structureen_US
dc.titleImprovement of resolution by maximum entropy linear image restoration for NiSi2/Si interfaceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalJOURNAL OF ELECTRON MICROSCOPYen_US
dc.citation.volume48en_US
dc.citation.issue6en_US
dc.citation.spage827en_US
dc.citation.epage836en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000085129600021-
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