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dc.contributor.authorLan, WHen_US
dc.contributor.authorLin, WJen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorTai, Ken_US
dc.contributor.authorTasi, CMen_US
dc.contributor.authorWu, PHen_US
dc.contributor.authorCheng, KHen_US
dc.contributor.authorChou, STen_US
dc.contributor.authorYang, CMen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorHuang, KFen_US
dc.date.accessioned2014-12-08T15:47:14Z-
dc.date.available2014-12-08T15:47:14Z-
dc.date.issued1998-12-10en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/31685-
dc.description.abstractOhmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.en_US
dc.language.isoen_USen_US
dc.titleAuBe Ohmic contacts to p-type ZnTeen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue25en_US
dc.citation.spage2434en_US
dc.citation.epage2435en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000077917700053-
dc.citation.woscount2-
Appears in Collections:Articles


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