AuBe Ohmic contacts to p-type ZnTe

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lan, WH	en_US
dc.contributor.author	Lin, WJ	en_US
dc.contributor.author	Cheng, YC	en_US
dc.contributor.author	Tai, K	en_US
dc.contributor.author	Tasi, CM	en_US
dc.contributor.author	Wu, PH	en_US
dc.contributor.author	Cheng, KH	en_US
dc.contributor.author	Chou, ST	en_US
dc.contributor.author	Yang, CM	en_US
dc.contributor.author	Cheng, YC	en_US
dc.contributor.author	Huang, KF	en_US
dc.date.accessioned	2014-12-08T15:47:14Z	-
dc.date.available	2014-12-08T15:47:14Z	-
dc.date.issued	1998-12-10	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31685	-
dc.description.abstract	Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.	en_US
dc.language.iso	en_US	en_US
dc.title	AuBe Ohmic contacts to p-type ZnTe	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	25	en_US
dc.citation.spage	2434	en_US
dc.citation.epage	2435	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000077917700053	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。