Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, KM | en_US |
dc.contributor.author | Hwang, GJ | en_US |
dc.contributor.author | Hsien, YL | en_US |
dc.date.accessioned | 2014-12-08T15:47:15Z | - |
dc.date.available | 2014-12-08T15:47:15Z | - |
dc.date.issued | 1998-12-01 | en_US |
dc.identifier.issn | 0946-7076 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31699 | - |
dc.description.abstract | A three-electrode capacitive pressure sensor for touch-mode operation with sensitivity of 0.030 pF/kPa (or 10.4 mV/kPa using CP-10 C/V converter circuit) in the pressure range of 170-280 kPa is presented with theoretical explanation of experimental results. A special ring structure is designed to integrate a sensing capacitor and a reference capacitor into the same cavity to partially cancel out the temperature effect. A third electrode is included to eliminate two-level connections without reducing its pressure sensitivity. The sensor offers the advantages of simple fabrication processes, planar connections, as well as high sensitivity, near-linear output, and large over-range pressure. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Three electrodes touch-mode capacitive pressure sensor | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROSYSTEM TECHNOLOGIES | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 93 | en_US |
dc.citation.epage | 99 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000077859200008 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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