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dc.contributor.authorCheng, HHen_US
dc.contributor.authorNicholas, RJen_US
dc.contributor.authorPriest, Aen_US
dc.contributor.authorTsai, FYen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSanchez-Dehesa, Jen_US
dc.date.accessioned2014-12-08T15:47:16Z-
dc.date.available2014-12-08T15:47:16Z-
dc.date.issued1998-12-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(98)00670-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/31715-
dc.description.abstractWe report photoluminescence measurements on In0.25Ga0.75As/GaAs quantum well and dots grown on (1 1 1)B GaAs substrate in high magnetic fields up to 45 Tesla. A well-defined PL line with full width at half maximum of approximately 5.5 meV is observed. From an analysis of the zero field transition energy, we point out the importance of an internal piezoelectric field. By analyzing the diamagnetic shift of the PL in both Faraday and Voigt configurations, the optical characteristics of a quasi-zero dimensional exciton are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectquantum wellen_US
dc.subjectquantum doten_US
dc.subjectmegagaussen_US
dc.subjectphotoluminescenceen_US
dc.titleMagneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4526(98)00670-Xen_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume256en_US
dc.citation.issueen_US
dc.citation.spage178en_US
dc.citation.epage181en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000077775900035-
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