Characteristics of N2O-grown polyoxide by the recrystallized-polysilicon method

Abstract

This work proposes a new method for growing the polyoxide and investigates its characteristics. Thin amorphous silicon was deposited on the first polysilicon and then recrystallized at 600 degrees C for 24 h to form a new polysilicon. The N2O-grown polyoxide formed by this method has a higher conduction current and better stress endurance than those of the conventional polyoxide. The higher quality polyoxide, as measured by lower gate voltage shift and larger charge-to-breakdown (Q(bd)), is due to the smooth polyoxide/polysilicon interface which increases the stress endurance under high fields. (C) 1998 The Electrochemical Society. S1099-0062(98)06-105-7. All rights reserved.