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dc.contributor.authorTsai, CYen_US
dc.contributor.authorLin, Cen_US
dc.date.accessioned2014-12-08T15:47:20Z-
dc.date.available2014-12-08T15:47:20Z-
dc.date.issued1998-12-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/31738-
dc.description.abstractTwo basic oxidation modes of silicon carbide/zirconial mullite (SiC/ZrO2/mullite) composites were defined based on the plotted curve of the gradient of the silica (SiO2) layer thickness (formed on individual SiC particles) versus depth. Mode I, where oxygen diffusivity was much slower in the matrix than in the SiO2 layer, exhibited a relatively large gradient and limited oxidation depth. Mode II, where oxygen diffusivity was much faster in the matrix than in the SiO2 layer, displayed a relatively small gradient and an extensive oxidation depth. When the volume fraction of ZrO2 was below a threshold limit, the composites exhibited Mode I behavior; otherwise, Mode II behavior mas observed. For composites with a ZrO2 content above the threshold limit, the formation of zircon (ZrSiO4), as a result of the reaction between ZrO2 and the oxidation product (i.e., SiO2), might change the oxidation behavior from Mode II to Mode I.en_US
dc.language.isoen_USen_US
dc.titleDependence of oxidation modes on zirconia content in silicon carbide zirconia mullite compositesen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume81en_US
dc.citation.issue12en_US
dc.citation.spage3150en_US
dc.citation.epage3156en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000077588000012-
dc.citation.woscount10-
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