完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, CY | en_US |
dc.contributor.author | Lin, C | en_US |
dc.date.accessioned | 2014-12-08T15:47:20Z | - |
dc.date.available | 2014-12-08T15:47:20Z | - |
dc.date.issued | 1998-12-01 | en_US |
dc.identifier.issn | 0002-7820 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31738 | - |
dc.description.abstract | Two basic oxidation modes of silicon carbide/zirconial mullite (SiC/ZrO2/mullite) composites were defined based on the plotted curve of the gradient of the silica (SiO2) layer thickness (formed on individual SiC particles) versus depth. Mode I, where oxygen diffusivity was much slower in the matrix than in the SiO2 layer, exhibited a relatively large gradient and limited oxidation depth. Mode II, where oxygen diffusivity was much faster in the matrix than in the SiO2 layer, displayed a relatively small gradient and an extensive oxidation depth. When the volume fraction of ZrO2 was below a threshold limit, the composites exhibited Mode I behavior; otherwise, Mode II behavior mas observed. For composites with a ZrO2 content above the threshold limit, the formation of zircon (ZrSiO4), as a result of the reaction between ZrO2 and the oxidation product (i.e., SiO2), might change the oxidation behavior from Mode II to Mode I. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dependence of oxidation modes on zirconia content in silicon carbide zirconia mullite composites | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | en_US |
dc.citation.volume | 81 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 3150 | en_US |
dc.citation.epage | 3156 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000077588000012 | - |
dc.citation.woscount | 10 | - |
顯示於類別: | 期刊論文 |