完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lu, TR | en_US |
dc.contributor.author | Chen, LC | en_US |
dc.contributor.author | Chen, KH | en_US |
dc.contributor.author | Bhusari, DM | en_US |
dc.contributor.author | Chen, TM | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.date.accessioned | 2014-12-08T15:47:23Z | - |
dc.date.available | 2014-12-08T15:47:23Z | - |
dc.date.issued | 1998-11-02 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31764 | - |
dc.description.abstract | In order to reduce the activation energy barrier for the formation of carbon nitride during ion beam sputtering, a novel bio-molecular target material, instead of the conventional graphite target, is successfully developed to deposit the crystalline carbon nitride films. The adenine target consists of a high N/C ratio as well as a 6-fold carbonitro-ring structure similar to that in the hypothetical C3N4. The mass spectrum of adenine indicates the existence of 11 main carbonitro-hydrogen containing species. Thus, the adenine target is anticipated to enhance the nucleation and growth of carbon nitride films by providing abundant carbonitro-hydrogen containing species as intermediate states. X-ray photoelectron spectrum analyses of these films indicated the presence of C and N in the films, with high nitrogen to carbon ratio at about 0.48. Both infrared and Raman spectroscopies confirm the chemical bonding between the carbon and nitrogen. X-ray and electron diffraction indicates the presence of crystalline carbon nitride in the film. (C) 1998 Elsevier Science S.A. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carbon nitride | en_US |
dc.subject | bio-inorganic target | en_US |
dc.subject | mass spectrometry | en_US |
dc.subject | ion beam sputtering | en_US |
dc.title | Sputtering process of carbon nitride films by using a novel bio-molecular C-N containing target | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 332 | en_US |
dc.citation.issue | 1-2 | en_US |
dc.citation.spage | 74 | en_US |
dc.citation.epage | 79 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000077202500015 | - |
顯示於類別: | 會議論文 |