標題: | Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition |
作者: | Lai, WC Chang, CY Yokoyama, M Guo, JD Tsang, JS Chan, SH Bow, JS Wei, SC Hong, RH Sze, SM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | remote plasma;MOCVD;stoichiometric growth |
公開日期: | 1-十月-1998 |
摘要: | GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of trimethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2 degrees. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD. |
URI: | http://hdl.handle.net/11536/31858 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 37 |
Issue: | 10 |
起始頁: | 5465 |
結束頁: | 5469 |
顯示於類別: | 期刊論文 |