Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)

Full metadata record

DC Field	Value	Language
dc.contributor.author	Sung, Chao-Feng	en_US
dc.contributor.author	Kekuda, Dhananjay	en_US
dc.contributor.author	Chu, Li Fen	en_US
dc.contributor.author	Lee, Yuh-Zheng	en_US
dc.contributor.author	Chen, Fang-Chung	en_US
dc.contributor.author	Wu, Meng-Chyi	en_US
dc.contributor.author	Chu, Chih-Wei	en_US
dc.date.accessioned	2014-12-08T15:47:40Z	-
dc.date.available	2014-12-08T15:47:40Z	-
dc.date.issued	2010-12-01	en_US
dc.identifier.issn	0935-9648	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31889	-
dc.language.iso	en_US	en_US
dc.title	Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)	en_US
dc.type	Correction	en_US
dc.identifier.journal	ADVANCED MATERIALS	en_US
dc.citation.volume	22	en_US
dc.citation.issue	45	en_US
dc.citation.spage	CP33	en_US
dc.citation.epage	CP33	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000285396400004	-
dc.citation.woscount	0	-
Appears in Collections:	Articles