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dc.contributor.authorLue, C. S.en_US
dc.contributor.authorYang, S. H.en_US
dc.contributor.authorSu, T. H.en_US
dc.contributor.authorYoung, Ben-Lien_US
dc.date.accessioned2014-12-08T15:47:44Z-
dc.date.available2014-12-08T15:47:44Z-
dc.date.issued2010-11-22en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.82.195129en_US
dc.identifier.urihttp://hdl.handle.net/11536/31919-
dc.description.abstractWe report the results of a (27)Al nuclear magnetic resonance (NMR) study of CeOs(2)Al(10) at temperatures between 4 and 300 K. This material has been of current interest due to indications of hybridization gap behavior below the transition temperature T(o)similar or equal to 29 K. Five (27)Al NMR resonance lines that are associated with five nonequivalent crystallographic aluminum sites have been resolved. For each individual aluminum site, the low-temperature NMR Knight shift goes over a thermally activated response. The temperature-dependent spin-lattice-relaxation rate exhibits a rapid drop below T(o), indicative of the formation of an energy gap in this material. We interpret the Knight shift and the relaxation-rate data in light of the presence of a pseudogap with residual electronic density of states at the Fermi level. Moreover, the magnitude of the pseudogap of 120 K is extracted from NMR results, in agreement with the value obtained from the inelastic neutron-scattering experiment.en_US
dc.language.isoen_USen_US
dc.titleNMR evidence for the partially gapped state in CeOs(2)Al(10)en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.82.195129en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume82en_US
dc.citation.issue19en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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