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dc.contributor.authorChen, Cheng-Changen_US
dc.contributor.authorChen, Jun-Rongen_US
dc.contributor.authorYang, Yi-Chunen_US
dc.contributor.authorShih, M. -H.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:47:45Z-
dc.date.available2014-12-08T15:47:45Z-
dc.date.issued2010-11-15en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2010.2083634en_US
dc.identifier.urihttp://hdl.handle.net/11536/31926-
dc.description.abstractIn this study, we demonstrated two-dimensional (2-D) photonic crystal band-edge coupling operation in the ultraviolet wavelength range. The light extraction enhancement was obtained from the photonic crystal structure with an ultraviolet AlN/AlGaN distributed Bragg reflector (UVDBR). The DBR provides a high reflectivity of 85% with 15-nm stopband width. A fivefold enhancement in photoluminescence emission was also achieved compared with the emission from the unpatterned area on the same sample at 374 nm wavelength. We also study the photonic crystal band-edge coupling with finite-difference time-domain and plane-wave expansion methods.en_US
dc.language.isoen_USen_US
dc.subjectBand-edge couplingen_US
dc.subjectphotonic crystalen_US
dc.subjectultraviolet distributed Bragg reflector (UVDBR)en_US
dc.titleLight Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2010.2083634en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume28en_US
dc.citation.issue22en_US
dc.citation.spage3189en_US
dc.citation.epage3192en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000284093400001-
dc.citation.woscount0-
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