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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorChen, Wei-Tsungen_US
dc.contributor.authorHsueh, Hsiu-Wenen_US
dc.contributor.authorKao, Shih-Chinen_US
dc.contributor.authorKu, Ming-Cheen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:47:45Z-
dc.date.available2014-12-08T15:47:45Z-
dc.date.issued2010-11-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3517506en_US
dc.identifier.urihttp://hdl.handle.net/11536/31930-
dc.description.abstractThis work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]en_US
dc.language.isoen_USen_US
dc.titleAmorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3517506en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.citation.issue20en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles


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