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dc.contributor.authorHuang, Yen-Chinen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorWeng, Li-Weien_US
dc.contributor.authorUen, Wu-Yihen_US
dc.contributor.authorLan, Shan-Mingen_US
dc.contributor.authorLiao, Sen-Maoen_US
dc.contributor.authorLin, Tai-Yuanen_US
dc.contributor.authorHuang, Yu-Hsiangen_US
dc.contributor.authorChen, Jian-Wenen_US
dc.contributor.authorYang, Tsun-Nengen_US
dc.date.accessioned2014-12-08T15:47:47Z-
dc.date.available2014-12-08T15:47:47Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.3484138en_US
dc.identifier.urihttp://hdl.handle.net/11536/31958-
dc.description.abstractThe structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) under various gas flow ratios of [H(2)O]/[DEZn] (VI/II ratio) ranging from 0.55 to 2.74 were systematically examined. Hall effect measurements exhibited an evident effect of the VI/II ratio on the conduction type of the intrinsic films. An n-type film was fabricated at the VI/II ratio=0.55; however, p-type ZnO films with the hole concentration of the order of 10(17) cm(-3) could be achieved at VI/II ratios higher than 1.0. In particular, the highest mobility of 91.6 cm(2)/V s and the lowest resistivity of 0.369 Omega cm have been achieved for the specimen fabricated at the VI/II ratio=1.10. Moreover, room-temperature photoluminescence (PL) measurements demonstrated an interstitial Zn (Zn(i)) donor defect related emission at 2.9 eV for the n-type film, while a Zn vacancy (V(Zn)) acceptor defect related one at 3.09 eV for the p-type films. The existence of material intrinsic defects was further confirmed by low temperature PL measurements conducted at 10 K. Conclusively, the conduction type of undoped ZnO films deposited by AP-MOCVD is resolved by the VI/II ratio used, which causes the formation of various kinds of intrinsic defects, Zn(i) otherwise VZn. p-type ZnO films with the hole concentration in the range of (1.5-3.3) x 10(17) cm(-3) can be achieved with good reproducibility by modulating a VI/II ratio the range 1.0-2.2 for the AP-MOCVD process. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3484138]en_US
dc.language.isoen_USen_US
dc.titleIntrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.3484138en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume28en_US
dc.citation.issue6en_US
dc.citation.spage1307en_US
dc.citation.epage1311en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000283745300006-
dc.citation.woscount3-
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