完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Watanabe, Hiroshi | en_US |
dc.contributor.author | Kawabata, Kenji | en_US |
dc.contributor.author | Ichikawa, Takashi | en_US |
dc.date.accessioned | 2014-12-08T15:47:55Z | - |
dc.date.available | 2014-12-08T15:47:55Z | - |
dc.date.issued | 2010-11-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2071150 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31992 | - |
dc.description.abstract | A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO(2) in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO(2) from the conduction band, which may suggest that the Si dot surrounded by SiO(2) sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A Tight Binding Method Study of Optimized Si-SiO(2) System | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2010.2071150 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 57 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 3084 | en_US |
dc.citation.epage | 3091 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
顯示於類別: | 期刊論文 |