A Tight Binding Method Study of Optimized Si-SiO(2) System

doi:10.1109/TED.2010.2071150

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Watanabe, Hiroshi	en_US
dc.contributor.author	Kawabata, Kenji	en_US
dc.contributor.author	Ichikawa, Takashi	en_US
dc.date.accessioned	2014-12-08T15:47:55Z	-
dc.date.available	2014-12-08T15:47:55Z	-
dc.date.issued	2010-11-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2010.2071150	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31992	-
dc.description.abstract	A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO(2) in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO(2) from the conduction band, which may suggest that the Si dot surrounded by SiO(2) sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm.	en_US
dc.language.iso	en_US	en_US
dc.title	A Tight Binding Method Study of Optimized Si-SiO(2) System	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2010.2071150	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	57	en_US
dc.citation.issue	11	en_US
dc.citation.spage	3084	en_US
dc.citation.epage	3091	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
顯示於類別：	期刊論文