Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

標題:	Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
作者:	Wang, M. C. Tsao, S. W. Chang, T. C. Lin, Y. P. Liu, Po-Tsun Chen, J. R. 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
關鍵字:	Photo leakage current;a-Si:H TFTs;Mechanical strain
公開日期:	1-十一月-2010
摘要:	The photo leakage current (I(PLC)) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I(PLC) of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E(F)). Experimental results show the I(PLC) of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E(a)) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E(F). (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2010.04.006 http://hdl.handle.net/11536/32000
ISSN:	0038-1101
DOI:	10.1016/j.sse.2010.04.006
期刊:	SOLID-STATE ELECTRONICS
Volume:	54
Issue:	11
起始頁:	1485
結束頁:	1487
顯示於類別：	期刊論文

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