標題: Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
作者: Trinh, Hai-Dang
Chang, Edward Yi
Wong, Yuen-Yee
Yu, Chih-Chieh
Chang, Chia-Yuan
Lin, Yueh-Chin
Nguyen, Hong-Quan
Tran, Binh-Tinh
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-十一月-2010
摘要: The reduction of native oxides on an In As surface using various wet and dry chemical treatments including hydrochloric acid (HCl) treatment sulfide treatment and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al(2)O(3) on In As is studied X ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning The combination of wet chemical treatment and TMA pretreatment is the most effective method for In As surface cleaning as indicated by the XPS analysis Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics on metal-oxide-semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al(2)O(3)/n In As interface quality after different surface treatments and the results are consistent with the XPS analysis (C) 2010 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.49.111201
http://hdl.handle.net/11536/32008
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.111201
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 11
起始頁: 
結束頁: 
顯示於類別:期刊論文