標題: Charge Trapping and Detrapping Behavior of Fluorinated HfO(2)/SiON Gate Stacked nMOSFET
作者: Chen, Yung-Yu
Hsieh, Chih-Ren
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2010
摘要: The charge trapping and detrapping characteristics of the fluorinated hafnium oxide/ oxynitride (HfO(2)/SiON) gate stack are investigated. Although incorporation of fluorine in the bulk stack had been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bond formation, respectively, the effective trapping barrier of the device with fluorine incorporation (1.29 eV) is deeper than without fluorine incorporation (1.13 eV), indicating that the detrapping ability of the fluorinated devices may limit future fluorine process applications.
URI: http://dx.doi.org/10.1109/LED.2010.2064753
http://hdl.handle.net/11536/32028
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2064753
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 11
起始頁: 1178
結束頁: 1180
顯示於類別:期刊論文