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dc.contributor.authorBalke, Ninaen_US
dc.contributor.authorGajek, Martinen_US
dc.contributor.authorTagantsev, Alexander K.en_US
dc.contributor.authorMartin, Lane W.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.date.accessioned2014-12-08T15:48:04Z-
dc.date.available2014-12-08T15:48:04Z-
dc.date.issued2010-10-22en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201000475en_US
dc.identifier.urihttp://hdl.handle.net/11536/32056-
dc.description.abstractFerroelectric polarization switching in epitaxial (110) BiFeO(3) films is studied using piezoresponse force microscopy of a model in-plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of the kinetics of domain evolution allows clear visualization of nucleation sites, as well as forward and lateral growth stages of domain formation. It is found that the location of the reverse-domain nucleation is correlated with the direction of switching in a way that the polarization in the domains nucleated at an electrode is always directed away from it. The role of interface charge injection and surface screening charge on switching mechanisms is explored, and the nucleation is shown to be controllable by the bias history of the sample. Finally, the manipulation of domain nucleation through domain structure engineering is illustrated. These studies pave the way for the engineering and design of the ferroelectric device structures through control of individual steps of the switching process.en_US
dc.language.isoen_USen_US
dc.titleDirect Observation of Capacitor Switching Using Planar Electrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201000475en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume20en_US
dc.citation.issue20en_US
dc.citation.spage3466en_US
dc.citation.epage3475en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000284000200006-
dc.citation.woscount34-
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