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dc.contributor.authorKuo, Chih-Yinen_US
dc.contributor.authorSu, Ming-Shinen_US
dc.contributor.authorHsu, Yu-Chienen_US
dc.contributor.authorLin, Hui-Nien_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.date.accessioned2014-12-08T15:48:04Z-
dc.date.available2014-12-08T15:48:04Z-
dc.date.issued2010-10-22en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201001047en_US
dc.identifier.urihttp://hdl.handle.net/11536/32057-
dc.description.abstractA thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)-containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT: PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm(-2)), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.en_US
dc.language.isoen_USen_US
dc.titleAn Organic Hole Transport Layer Enhances the Performance of Colloidal PbSe Quantum Dot Photovoltaic Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201001047en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume20en_US
dc.citation.issue20en_US
dc.citation.spage3555en_US
dc.citation.epage3560en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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