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dc.contributor.authorOu, Yi-Chingen_US
dc.contributor.authorZhuravelv, Konstantin S.en_US
dc.contributor.authorFang, Jiyeen_US
dc.contributor.authorJian, Wen-Binen_US
dc.date.accessioned2014-12-08T15:48:05Z-
dc.date.available2014-12-08T15:48:05Z-
dc.date.issued2010-10-21en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp105344ben_US
dc.identifier.urihttp://hdl.handle.net/11536/32066-
dc.description.abstractAlthough self-organization of semiconductor nanocrystals (or quantum dots) into 3D superlattices and exploration of their collective optical, magnetic, and transport properties have been (demonstrated. little is known about the underlying physics of self-assembly, growth mechanisms, and interdot-coupling-induced collective properties. Here we report a facile way of preparing nanocrystal-assembled 2D islands by dropcasting nanocrystal suspension on a hot substrate. Growth mechanisms such as scaling function, spinodal decomposition phase separation, and diffusion-limited aggregation are investigated based on the observation of quasi-monolayer coverage. After a curve fitting to several theoretical growth models, the pair bond (interaction) energy, critical nucleus size, and the phase of growth patterns were determined. Moreover, by heating the substrate and controlling the concentration of nanocrystal suspension, the spinodal decomposition and diffusion-limited aggregation can be tuned to modulate growth patterns of 2D nanocrystal islands. The interplay of these two mechanisms results in a variation or wavelength in spinodal growth patterns and of fractal pattern dimensions. By using this experimental approach. various sizes and shapes of nanocrystal-assembled 2D islands can be deposited on a flat surface of either graphite or gold.en_US
dc.language.isoen_USen_US
dc.titleInterplay of Spinodal and Diffusion-Limited Aggregation in Formation of Nanocrystal Assembled 2D Islandsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp105344ben_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume114en_US
dc.citation.issue41en_US
dc.citation.spage17416en_US
dc.citation.epage17421en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000282855400023-
dc.citation.woscount4-
Appears in Collections:Articles


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