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dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorLiao, Yu-Shengen_US
dc.contributor.authorChi, Yu-Chiehen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Gong-Chengen_US
dc.contributor.authorWang, Hai-Linen_US
dc.contributor.authorChen, Yung-Juien_US
dc.date.accessioned2014-12-08T15:48:05Z-
dc.date.available2014-12-08T15:48:05Z-
dc.date.issued2010-10-15en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2010.2060470en_US
dc.identifier.urihttp://hdl.handle.net/11536/32072-
dc.description.abstractWe simulate the injection-locking performance of a 1% antireflection coated Fabry-Perot laser amplifier (AR-FPLA) and demonstrate the 2.5-Gbit/s DWDM-PON application with the directly modulated AR-FPLA based ONU transmitter under side-mode injection-locking condition. The effect of the AR-FPLA front-facet reflectivity on the injection locking range detuning and the Q-factor are interpreted from theoretical simulations and are experimentally characterized. A 25-channel locking capacity is reported for such a side-mode injection-locked AR-FPLA with corresponding wavelength locking range of 30 nm, the minimal requested power of -7 dBm and gain extinction ratio of < 7 dB by reducing its front-facet reflectivity to 1%. At bit rate of 2.5 Gbit/s, the BER of 10(-12) is achievable for the nearest 17 channels of AR-FPLA at receiving power of -21 dBm, and all of the 25 injection-locked channels with SMSR of > 35 dB can guarantee the BER of < 10(-9) with their worst receiving sensitivity degrading to -19 dBm.en_US
dc.language.isoen_USen_US
dc.subjectAnti-reflection (AR) coatingen_US
dc.subjectDWDM channelizationen_US
dc.subjectFabry-Perot laser amplifier (FPLA)en_US
dc.subjectfiber-to-the-homeen_US
dc.subjectoptical network unit (ONU)en_US
dc.subjectpassive optical network (PON)en_US
dc.subjectside-mode injection-lockingen_US
dc.titleLong-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2010.2060470en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume28en_US
dc.citation.issue20en_US
dc.citation.spage2925en_US
dc.citation.epage2932en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000283358500004-
dc.citation.woscount22-
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