標題: Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer
作者: Wu, W. W.
Wang, C. W.
Chen, K. N.
Cheng, S. L.
Lee, S. W.
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2010
摘要: Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.tsf.2010.04.090
http://hdl.handle.net/11536/32115
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.04.090
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7279
結束頁: 7282
顯示於類別:期刊論文