Title: | Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer |
Authors: | Wu, W. W. Wang, C. W. Chen, K. N. Cheng, S. L. Lee, S. W. 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Oct-2010 |
Abstract: | Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.04.090 http://hdl.handle.net/11536/32115 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.04.090 |
Journal: | THIN SOLID FILMS |
Volume: | 518 |
Issue: | 24 |
Begin Page: | 7279 |
End Page: | 7282 |
Appears in Collections: | Articles |