完整後設資料紀錄
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dc.contributor.authorTeng, I-Juen_US
dc.contributor.authorHong, Tsai-Hauen_US
dc.contributor.authorHsu, Hui-Linen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorWang, Wei-Hsiangen_US
dc.contributor.authorKuo, Cheng-Tzuen_US
dc.date.accessioned2014-12-08T15:48:11Z-
dc.date.available2014-12-08T15:48:11Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.04.110en_US
dc.identifier.urihttp://hdl.handle.net/11536/32122-
dc.description.abstractFor improving compatibility with IC processes, this work presents a low temperature process (<400 degrees C) to fabricate a small-sized-carbon nanotube (CNT) (<6 graphene layers) pattern by buffer layer (AlN) and CoCrPtO(x) catalyst precursor-assisted microwave plasma chemical vapor deposition (MPCVD). Without high temperature heating on the whole specimen, the low temperature process mainly results from selective local activation laser heating (>= 600 degrees C) to form the catalyst nanostructures, which are beneficial to low temperature H-plasma treatment to form catalyst nanoparticles for CNT growth. The functions of the buffer layer and the catalyst precursor are to help the heat dissipation and the small-sized CNT formation. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleLaser, buffer layer and CoCrPtO(x)-assisted low temperature fabrication process of a small-sized-CNT pattern by MPCVDen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.04.110en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.issue24en_US
dc.citation.spage7348en_US
dc.citation.epage7351en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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