Effect of ultraviolet light exposure on a HfO(x) RRAM device

doi:10.1016/j.tsf.2010.05.024

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Kou-Chen	en_US
dc.contributor.author	Tzeng, Wen-Hsien	en_US
dc.contributor.author	Chang, Kow-Ming	en_US
dc.contributor.author	Chan, Yi-Chun	en_US
dc.contributor.author	Kuo, Chun-Chih	en_US
dc.date.accessioned	2014-12-08T15:48:11Z	-
dc.date.available	2014-12-08T15:48:11Z	-
dc.date.issued	2010-10-01	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2010.05.024	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32126	-
dc.description.abstract	This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO(x)/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO(x)/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO(2) layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices. (C) 2010 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of ultraviolet light exposure on a HfO(x) RRAM device	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.tsf.2010.05.024	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	518	en_US
dc.citation.issue	24	en_US
dc.citation.spage	7460	en_US
dc.citation.epage	7463	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文