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dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChien, Shang-Chiehen_US
dc.contributor.authorCious, Guan-Linen_US
dc.date.accessioned2014-12-08T15:48:18Z-
dc.date.available2014-12-08T15:48:18Z-
dc.date.issued2010-09-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3488017en_US
dc.identifier.urihttp://hdl.handle.net/11536/32201-
dc.description.abstractHighly sensitive polymer photodetectors exhibiting broad spectral responses, ranging from the ultraviolet to the near-infrared (NIR) region, are obtained after incorporating an organic NIR dye into the device active layer. As a result, high external quantum efficiencies (>7000%) and high responsivities (32.4 A/W) are achieved at an extremely low operating voltage (-1.5 V). The high photomultiplation could be attribute to trapping of electrons, originating from the photogenerated electron/hole pairs, at the dye molecules, which effectively facilitates hole injection from the external circuit. The device preparation scheme presented herein opens up the possibility fabricating lost-cost, flexible organic photodetectors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488017]en_US
dc.language.isoen_USen_US
dc.titleHighly sensitive, low-voltage, organic photomultiple photodetectors exhibiting broadband responseen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3488017en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000282478800047-
dc.citation.woscount12-
Appears in Collections:Articles


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