Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

doi:10.1049/el.2010.1939

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, C. -T.	en_US
dc.contributor.author	Hsu, T. -H.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.contributor.author	Chen, Y. -C.	en_US
dc.contributor.author	Trinh, H. -D.	en_US
dc.contributor.author	Chen, K. J.	en_US
dc.date.accessioned	2014-12-08T15:48:19Z	-
dc.date.available	2014-12-08T15:48:19Z	-
dc.date.issued	2010-09-02	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el.2010.1939	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32202	-
dc.description.abstract	Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.	en_US
dc.language.iso	en_US	en_US
dc.title	Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el.2010.1939	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	18	en_US
dc.citation.spage	1280	en_US
dc.citation.epage	U63	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000281693800025	-
dc.citation.woscount	16	-
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