Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants

Full metadata record

DC Field	Value	Language
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Hwang, Chih-Hong	en_US
dc.contributor.author	Yeh, Ta-Ching	en_US
dc.date.accessioned	2014-12-08T15:48:22Z	-
dc.date.available	2014-12-08T15:48:22Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2071-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32220	-
dc.language.iso	en_US	en_US
dc.title	Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants	en_US
dc.type	Article	en_US
dc.identifier.journal	2008 IEEE SILICON NANOELECTRONICS WORKSHOP	en_US
dc.citation.spage	99	en_US
dc.citation.epage	100	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000279102800051	-
Appears in Collections:	Conferences Paper