Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Hwang, Chih-Hong	en_US
dc.contributor.author	Yeh, Ta-Ching	en_US
dc.date.accessioned	2014-12-08T15:48:22Z	-
dc.date.available	2014-12-08T15:48:22Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2071-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32220	-
dc.language.iso	en_US	en_US
dc.title	Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants	en_US
dc.type	Article	en_US
dc.identifier.journal	2008 IEEE SILICON NANOELECTRONICS WORKSHOP	en_US
dc.citation.spage	99	en_US
dc.citation.epage	100	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000279102800051	-
顯示於類別：	會議論文